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Autor(en): 
  • Cher Ming Tan
  • ELECTROMIGRATION IN ULSI INTERCONNECTI 
     

    (Buch)
    Dieser Artikel gilt, aufgrund seiner Grösse, beim Versand als 3 Artikel!


    Übersicht

    Auf mobile öffnen
     
    Lieferstatus:   i.d.R. innert 7-14 Tagen versandfertig
    Veröffentlichung:  Juni 2010  
    Genre:  Naturwissensch., Medizin, Technik 
    ISBN:  9789814273329 
    EAN-Code: 
    9789814273329 
    Verlag:  World Scientific 
    Einband:  Gebunden  
    Sprache:  English  
    Dimensionen:  H 235 mm / B 157 mm / D 21 mm 
    Gewicht:  607 gr 
    Seiten:  312 
    Zus. Info:  HC gerader Rücken kaschiert 
    Bewertung: Titel bewerten / Meinung schreiben
    Inhalt:
    Electromigration in ULSI Interconnections provides a comprehensive description of the electromigration in integrated circuits. It is intended for both beginner and advanced readers on electromigration in ULSI interconnections. It begins with the basic knowledge required for a detailed study on electromigration, and examines the various interconnected systems and their evolution employed in integrated circuit technology. The subsequent chapters provide a detailed description of the physics of electromigration in both Al- and Cu-based Interconnections, in the form of theoretical, experimental and numerical modeling studies. The differences in the electromigration of Al- and Cu-based interconnections and the corresponding underlying physical mechanisms for these differences are explained.

    The test structures, testing methodology, failure analysis methodology and statistical analysis of the test data for the experimental studies on electromigration are presented in a concise and rigorous manner. Methods of numerical modeling for the interconnect electromigration and their applications to the understanding of electromigration physics are described in detail with the aspects of material properties, interconnection design, and interconnect process parameters on the electromigration performances of interconnects in ULSI further elaborated upon. Finally, the extension of the studies to narrow interconnections is introduced, and future challenges on the study of electromigration are outlined and discussed.

      



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